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In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.
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doping silicon dopant used semiconductor diffusion band n-type boron concentration dopants doped phosphorus also semiconductors devices atoms low gold p-type
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| Boron tribromide or diborane as a source for doping with boron | instance of | is widely used in silicon photovoltaics and uses chemicals | 0.80 | text |
| nitrogen | instance of | it is carried to the furnace using a carrier gas | 0.80 | text |
| and then allowed to decompose on the hot surface of the wafer | instance of | it is carried to the furnace using a carrier gas | 0.80 | text |
| depositing the desired dopant | instance of | it is carried to the furnace using a carrier gas | 0.80 | text |
| such as arsenic for example | instance of | it is carried to the furnace using a carrier gas | 0.80 | text |
| diamond | instance of | For the Group IV semiconductors | 0.80 | text |
| silicon | instance of | For the Group IV semiconductors | 0.80 | text |
| germanium | instance of | For the Group IV semiconductors | 0.80 | text |
| silicon carbide | instance of | For the Group IV semiconductors | 0.80 | text |
| and silicon | instance of | For the Group IV semiconductors | 0.80 | text |
| phosphorus | instance of | because it diffuses more slowly than phosphorus and is thus more controllable.By doping pure silicon with Group V elements | 0.80 | text |
| extra valence electrons are added that become unbounded from individual atoms | instance of | because it diffuses more slowly than phosphorus and is thus more controllable.By doping pure silicon with Group V elements | 0.80 | text |
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