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A p–n junction is a combination of two types of semiconductor materials, p-type and n-type, in a single crystal. The "n" (negative) side contains freely-moving electrons, while the "p" (positive) side contains freely-moving electron holes. Connecting the two materials causes creation of a depletion region near the boundary, as the free electrons fill the…
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junction electrons region holes p-type semiconductor charge n-type current diode voltage depletion flow junctions carriers equilibrium displaystyle electric two potential
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| P–n junction | is a | combination of two types of semiconductor materials | 0.90 | text |
| the BJT | instance of | Transistors | 0.80 | text |
| MOSFET | instance of | Transistors | 0.80 | text |
| JFET | instance of | Transistors | 0.80 | text |
| and IGBT all utilize p | instance of | Transistors | 0.80 | text |
| Boron are introduced into its crystal lattice | instance of | one where impurities | 0.80 | text |
| electrons | instance of | can become depleted of charge carriers | 0.80 | text |
| depending on the relative voltages of the two semiconductor regions.By manipulating the flow of charge carriers across this depleted layer | instance of | can become depleted of charge carriers | 0.80 | text |
| p | instance of | can become depleted of charge carriers | 0.80 | text |
| P–n junction | related to Current across depletion region | The Shockley | 0.60 | section |
| P–n junction | related to Current across depletion region | To | 0.60 | section |
| P–n junction | related to Current across depletion region | The | 0.60 | section |
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