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Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In…

Organometallic precursors, Semiconductors grown by MOCVD & Basic principles

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Organometallic precursors

AluminiumTrimethylaluminiumTriethylaluminiumGalliumTrimethylgallium
35 related topics

Semiconductors grown by MOCVD

AlNAlPAlGaNAlGaPAlGaAs
38 related topics

Basic principles

MetalorganicIndium phosphideTrimethylindiumPhosphineSemiconductor wafer
13 related topics

Reactor components

SusceptorGlassesGraphiteSilicon nitrideTantalum carbide
12 related topics

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Basic principles

Reactor components

Organometallic precursors

Semiconductors grown by MOCVD

  • AlN Aluminium nitride
  • AlP Aluminium phosphide
  • AlGaN Aluminium gallium nitride
  • AlGaP Aluminium gallium phosphide
  • AlGaAs Aluminium gallium arsenide
  • AlGaSb Aluminium gallium antimonide
  • AlGaInP Aluminium gallium indium phosphide
  • AlInSb Aluminium indium antimonide
  • GaSb Gallium antimonide
  • GaAsP Gallium arsenide phosphide
  • GaAsSb Gallium arsenide antimonide
  • GaAs Gallium arsenide
  • GaN Gallium nitride
  • GaP Gallium phosphide
  • InAlAs Indium aluminium arsenide?action=edit&redlink=1
  • InAlP Indium aluminium phosphide?action=edit&redlink=1
  • InSb Indium antimonide
  • InGaSb Indium gallium antimonide
  • InGaN Indium gallium nitride
  • GaInAlAs Gallium indium aluminium arsenide?action=edit&redlink=1
  • GaInAlN Gallium indium aluminium nitride?action=edit&redlink=1
  • GaInAsN Gallium indium arsenide nitride?action=edit&redlink=1
  • GaInAsP Gallium indium arsenide phosphide?action=edit&redlink=1
  • GaInAs Gallium indium arsenide
  • GaInP Gallium indium phosphide?action=edit&redlink=1
  • InN Indium nitride
  • InAs Indium arsenide
  • InAsSb Indium arsenide antimonide
  • AlInN Aluminium indium nitride?action=edit&redlink=1
  • ZnO

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Metalorganic vapour-phase epitaxy

Nodes118
Edges117
Triples3
Avg. degree1.98
Density0.016949
Components1

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Important terminology

reactor susceptor gas mocvd chemical metalorganic chamber used growth also temperature made semiconductor reaction deposition gases surface substrate materials walls

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
carboninstance ofThe pedestal/susceptor is made of a radiation-absorbing material0.80text
GaAsinstance ofand of course abatement equipment to fully capture toxic materials which can be present in the growth of arsenic containing alloys0.80text
InGaAsPinstance ofand of course abatement equipment to fully capture toxic materials which can be present in the growth of arsenic containing alloys0.80text

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