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Spintronics (a portmanteau of spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems. The analogous effects in…
History, Applications & Science
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spin magnetic devices ferromagnetic electron computing current electrons transport field spintronic electronics spin-polarized magnetoresistance doi applications materials effect information systems
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| computers | instance of | this spintronics behavior requires far less current than the conventional charge-based electronics that powers devices | 0.80 | text |
| phones | instance of | this spintronics behavior requires far less current than the conventional charge-based electronics that powers devices | 0.80 | text |
| magnetoresistance effects | instance of | leading to spin lifetimes of milliseconds in semiconductor quantum dots at low temperatures.Superconductors can enhance central effects in spintronics | 0.80 | text |
| spin lifetimes | instance of | leading to spin lifetimes of milliseconds in semiconductor quantum dots at low temperatures.Superconductors can enhance central effects in spintronics | 0.80 | text |
| dissipationless spin-currents.The simplest method of generating a spin-polarised current in a metal is to pass the current through a ferromagnetic material | instance of | leading to spin lifetimes of milliseconds in semiconductor quantum dots at low temperatures.Superconductors can enhance central effects in spintronics | 0.80 | text |
| tunnel magnetoresistance is also being explored | instance of | Reading information in antiferromagnets via magnetoresistance effects | 0.80 | text |
| steeper sub-threshold slope.Magnetic-tunnel transistorMagnetic-tunnel transistors | instance of | Future applications may include a spin-based transistor having advantages over MOSFET devices | 0.80 | text |
| magnetic tunnel junctions | instance of | spintronic elements | 0.80 | text |
| temporal integration | instance of | These devices can inherently realize operations | 0.80 | text |
| leakage | instance of | These devices can inherently realize operations | 0.80 | text |
| threshold activation | instance of | These devices can inherently realize operations | 0.80 | text |
| and synaptic plasticity through the behavior of magnetic moments under spin-transfer torque or spin | instance of | These devices can inherently realize operations | 0.80 | text |
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