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Czochralski method

The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals (monocrystals) of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The method is named after Polish scientist Jan Czochralski…

History & Applications

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Overview

History

Application

Production of Czochralski silicon

Crystal sizes

  • Wafer Wafer (electronics)

Incorporating impurities

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Czochralski method

Nodes65
Edges64
Triples64
Avg. degree1.97
Density0.030769
Components1

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Czochralski method

Top relations

related to Incorporating impurities · 14
Czochralski method → Additionally, Carefully, CERN's LHC/HL-LHC, Czochralski, Czochralski-silicon, During, However, It, Module, Oxygen, Therefore, These, This, When
related to Application · 13
Czochralski method → Additionally, Cz-Si, Czochralski, For, Furthermore, It, Monocrystalline, Si, The, This, TVs, Use, YAG
related to Early developments (1915–1930s) · 12
Czochralski method → AEG, Berlin, Czochralski, Germany, His, Iowa, Jan Czochralski, Polish, Shortly, Tyndall's, University, Until
related to Global spread and process refinements (late 1950s–present) · 12
Czochralski method → Czech Republic, Czochralski, During, France, Germany, In Europe, In Japan, Netherlands, Russia, Switzerland, The, United Kingdom
related to Post–World War II revival (1940s–1950s) · 8
Czochralski method → Bell Labs, Czochralski, Gordon Teal, In, The, This, United States, World War II

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Important terminology

silicon method czochralski process crystal crystals oxygen growth single semiconductor crucible technique used also impurities melt grown using semiconductors production

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
physical vapor transport.The method is not limited to production of metal or metalloid crystalsinstance ofOther semiconductors such as silicon carbide are grown using other methods0.80text
sodium chlorideinstance ofincluding high-melting-point materials0.80text
boron or phosphorus can be added to the molten silicon in precise amounts to dope the siliconinstance ofDopant impurity atoms0.80text
thus changing it into p-type or n-type siliconinstance ofDopant impurity atoms0.80text
with different electronic propertiesinstance ofDopant impurity atoms0.80text
Czochralski methodrelated to ApplicationMonocrystalline0.60section
Czochralski methodrelated to ApplicationSi0.60section
Czochralski methodrelated to ApplicationCzochralski0.60section
Czochralski methodrelated to ApplicationCz-Si0.60section
Czochralski methodrelated to ApplicationIt0.60section
Czochralski methodrelated to ApplicationTVs0.60section
Czochralski methodrelated to ApplicationThe0.60section

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