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In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with…
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gate channel voltage transistor current source drain semiconductor mosfets device silicon used circuits power dielectric oxide layer devices metal leakage
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| MOSFET | is a | n-channel or nMOS FET | 0.90 | text |
| MOSFET | is a | p-channel or pMOS FET | 0.90 | text |
| MOSFET | is a | four-terminal device | 0.90 | text |
| MOSFET | is a | dielectric which can in any event be silicon oxide | 0.90 | text |
| microprocessors | instance of | ApplicationsDigital integrated circuits | 0.80 | text |
| memory devices contain thousands to billions of integrated MOSFETs on each device | instance of | ApplicationsDigital integrated circuits | 0.80 | text |
| providing the basic switching functions required to implement logic gates | instance of | ApplicationsDigital integrated circuits | 0.80 | text |
| data storage | instance of | ApplicationsDigital integrated circuits | 0.80 | text |
| switch mode power supplies | instance of | Discrete devices are widely used in applications | 0.80 | text |
| variable-frequency drives | instance of | Discrete devices are widely used in applications | 0.80 | text |
| other power electronics applications where each device may be switching thousands of watts | instance of | Discrete devices are widely used in applications | 0.80 | text |
| tungsten | instance of | sometimes a high-temperature metal | 0.80 | text |
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