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Process variation (semiconductor)

Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated. The amount of process variation becomes particularly pronounced at smaller process nodes (<65 nm) as the variation becomes a larger percentage of the full length or width of the device and as…

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History

William ShockleyThreshold voltageMOSGate oxideDopant
5 related topics

Characterization

HSPICEProcess cornersFront End Of Line
3 related topics

Workarounds & Solutions

Lithography
1 related topics

Overview

Integrated circuitsFabricatedProcess nodesAnalog circuitsRise time
5 related topics

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Characterization

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Process variation (semiconductor)

Nodes19
Edges18
Triples4
Avg. degree1.89
Density0.105263
Components1

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process variation oxide thickness transistors width etc devices length circuits device lithography variations used corners approach due measured set particularly

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
the size of atomsinstance ofas the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental dimensions0.80text
the wavelength of usable light for patterning lithography masks.Process variation causes measurableinstance ofas the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental dimensions0.80text
predictable variance in the output performance of all circuits but particularly analog circuits due to mismatchinstance ofas the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental dimensions0.80text
fabless semiconductor companiesinstance ofThese measurements are recorded and provided to customers0.80text

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