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LOCOS, short for local oxidation of silicon, is a microfabrication process where silicon dioxide is formed in selected areas on a silicon wafer having the Si-SiO2 interface at a lower point than the rest of the silicon surface. As of 2008 it was largely superseded by shallow trench isolation.
Technology & Standards
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silicon oxidation wafer oxide process formed selected si-sio2 interface lower point rest surface transistors structure penetrates shallow trench isolation microfabrication
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