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Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material…
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dry etching semiconductor plasma etch process used high equipment removal material wet typically design see oxygen may uniformity sometimes portions
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| fluorocarbons | instance of | usually a plasma of reactive gases | 0.80 | text |
| oxygen | instance of | usually a plasma of reactive gases | 0.80 | text |
| chlorine | instance of | usually a plasma of reactive gases | 0.80 | text |
| boron trichloride | instance of | usually a plasma of reactive gases | 0.80 | text |
| pitch doubling or quartering to gain advanced resolutions | instance of | so many manufacturers rely on dry etching strategies | 0.80 | text |
| Tokyo Electronic | instance of | and an exhaust system.Design varies from manufacturers | 0.80 | text |
| Applied Materials | instance of | and an exhaust system.Design varies from manufacturers | 0.80 | text |
| and Lam | instance of | and an exhaust system.Design varies from manufacturers | 0.80 | text |
| Dry etching | has application | Dry | 0.60 | section |
| Dry etching | has application | Applications | 0.60 | section |
| Dry etching | has application | FinFET | 0.60 | section |
| Dry etching | has application | Along | 0.60 | section |
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