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Plasma ashing

In semiconductor manufacturing plasma ashing is the process of removing the photoresist (light sensitive coating) from an etched wafer. Using a plasma source, a monatomic (single atom) substance known as a reactive species is generated. Oxygen or fluorine are the most common reactive species. Other gases used are N2/H2 where the H2 portion is 2%. The…

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Plasma ashing

Nodes12
Edges11
Triples9
Avg. degree1.83
Density0.166667
Components1

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Plasma ashing

Top relations

related to Types · 8
Plasma ashing → Because, High, Monatomic, The, This, To, Two, Typical
is a · 1
Plasma ashing → process of removing the photoresist

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Important terminology

plasma process species wafer oxygen reactive ions surface particles photoresist monatomic ashing charged also portion high free radicals generated vacuum

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
Plasma ashingis aprocess of removing the photoresist0.90text
Plasma ashingrelated to TypesTwo0.60section
Plasma ashingrelated to TypesHigh0.60section
Plasma ashingrelated to TypesThe0.60section
Plasma ashingrelated to TypesTypical0.60section
Plasma ashingrelated to TypesMonatomic0.60section
Plasma ashingrelated to TypesThis0.60section
Plasma ashingrelated to TypesBecause0.60section
Plasma ashingrelated to TypesTo0.60section

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