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A power MOSFET is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT…
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| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| Power MOSFET | Working principle | Semiconductor | 1.00 | infobox |
| Power MOSFET | is a | type of metal | 0.90 | text |
| Power MOSFET | is a | most common power semiconductor device in the world | 0.90 | text |
| Power MOSFET | is a | most widely used power semiconductor device in the world | 0.90 | text |
| HH Electronics | instance of | during which time LDMOS was used in audio power amplifiers from manufacturers | 0.80 | text |
| 2G | instance of | the LDMOS became the most widely used RF power amplifier in mobile networks | 0.80 | text |
| 3G | instance of | the LDMOS became the most widely used RF power amplifier in mobile networks | 0.80 | text |
| and 4G.Alex Lidow co-invented the HexFET | instance of | the LDMOS became the most widely used RF power amplifier in mobile networks | 0.80 | text |
| a hexagonal type of Power MOSFET | instance of | the LDMOS became the most widely used RF power amplifier in mobile networks | 0.80 | text |
| at Stanford University in 1977 | instance of | the LDMOS became the most widely used RF power amplifier in mobile networks | 0.80 | text |
| along with Tom Herman | instance of | the LDMOS became the most widely used RF power amplifier in mobile networks | 0.80 | text |
| H bridge or half bridge | instance of | making it able to block current in only one direction.Body diodes may be utilized as freewheeling diodes for inductive loads in configurations | 0.80 | text |
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