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Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures. As the structure size in…
History & Standards
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| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| Electromigration | is a | transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms | 0.90 | text |
| integrated circuits | instance of | As the structure size in electronics | 0.80 | text |
| low voltage power MOSFETs | instance of | but not before significant damage was done to the company's reputation.Electromigration can be a cause of degradation in some power semiconductor devices | 0.80 | text |
| in which the lateral current through the source contact metallisation | instance of | but not before significant damage was done to the company's reputation.Electromigration can be a cause of degradation in some power semiconductor devices | 0.80 | text |
| Electromigration | has effect | In | 0.60 | section |
| Electromigration | has effect | Normally | 0.60 | section |
| Electromigration | has effect | However | 0.60 | section |
| Electromigration | has effect | VLSI | 0.60 | section |
| Electromigration | has effect | High | 0.60 | section |
| Electromigration | related to Bamboo structure and metal slotting | Also | 0.60 | section |
| Electromigration | related to Bamboo structure and metal slotting | However | 0.60 | section |
| Electromigration | related to Bamboo structure and metal slotting | The | 0.60 | section |
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