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Ion implantation

Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the target's physical, chemical, or electrical properties. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental…

Applications & Science

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General principle

Ion sourceAcceleratorParticle radiationKeVIon beam deposition
19 related topics

Safety

WafersToxicPhosphineCarcinogenicFlammable
15 related topics

Application in semiconductor device fabrication

Semiconductor dopingAnnealingHoleP-typeN-type
9 related topics

Other applications

Ion beam mixingNanoparticleSapphireSilicaOptoelectronics
6 related topics

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Overview

General principle

Application in semiconductor device fabrication

Application in metal finishing

Other applications

Problems with ion implantation

Safety

Advanced semantic analysis

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Map overview Semantic statistics

Ion implantation

Nodes73
Edges72
Triples98
Avg. degree1.97
Density0.027397
Components1

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Ion implantation

Top relations

related to Doping · 16
Ion implantation → Annealing, Cryo-implants, Cryogenic, Ion, KeV, LTPS, MeV, MOSFET, Rapid Thermal Processing, Semiconductor, SiC, Sometimes, The, This, To, When
related to General principle · 12
Ion implantation → Bragg, Each, Energies, Higher, However, Ion, MeV, The, Therefore, This, Thus, Typical
related to Crystallographic damage · 7
Ion implantation → Different, Each, Interstitials, Strain, These, This, Vacancies
related to Ion implantation-induced nanoparticle formation · 6
Ion implantation → Composite, Hampikian, Hunt, Ion, The, Typical
related to Ion source · 6
Ion implantation → All, Alternatively, Arsine, Lanthanum, Often, The
related to Amorphization · 5
Ion implantation → Amorphisation, An, For, In, The
see also · 4
Ion implantation → Ions, MatterPlasma-immersion, Range, Stopping
related to Damage recovery · 3
Ion implantation → Because, RTA, Some
related to High voltages and particle accelerators · 3
Ion implantation → High, In, X-rays
related to Surface finishing · 3
Ion implantation → As, In, Ion

Important terminology Word statistics

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Important terminology

ion implantation target ions used beam implanted energy high source often surface also crystal semiconductor process solid materials annealing damage

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
Ion implantationcausesunwanted damage to the crystal structure of the target0.90text
Ion implantationis alow-temperature process by which ions of one element are accelerated into a solid target0.90text
Ion implantationis aspecial case of particle radiation0.90text
tungsteninstance ofThe source is closely coupled to biased electrodes for extraction of the ions into the beamline and most often to some means of selecting a particular ion species for transport…0.80text
tungsten doped with lanthanum oxideinstance ofThe source is closely coupled to biased electrodes for extraction of the ions into the beamline and most often to some means of selecting a particular ion species for transport…0.80text
carbon dioxide for implanting carboninstance ofcan be used to provide ions for implantation0.80text
aluminuminstance ofIn medium current ion implanters there is also a neutral ion trap before the process chamber to remove neutral ions from the ion beam.Some dopants0.80text
are often not provided to the ion source as a gas but as a solid compound based on Chlorine or Iodine that is vaporized in a nearby crucible such as Aluminium iodide or Aluminium chloride or as a solid sputtering target inside the ion source made of Aluminium oxide or Aluminium nitrideinstance ofIn medium current ion implanters there is also a neutral ion trap before the process chamber to remove neutral ions from the ion beam.Some dopants0.80text
antimony hexafluoride or vaporized from liquid antimony pentafluorideinstance ofalthough it can also be implanted from a gas containing fluorine0.80text
selenium dioxide for selenium although it can also be implanted from hydrogen selenideinstance ofSelenium and Indium are often implanted from solid sources0.80text
during the manufacturing of SiC devicesinstance ofSometimes0.80text
ion implantation is carried out while heating the SiC wafer to 500instance ofSometimes0.80text

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