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Float-zone silicon

Float-zone (FZ) silicon is very pure silicon obtained by vertical zone melting. The process was developed at Bell Labs by Henry Theurer in 1955 as a modification of a method developed by Bill Pfann for germanium. In the vertical configuration molten silicon has sufficient surface tension to keep the charge from separating. The major advantages is…

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Float-zone silicon

Nodes23
Edges22
Triples3
Avg. degree1.91
Density0.086957
Components1

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Float-zone silicon

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related to Application · 2
Float-zone silicon → Float-zone, It

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silicon growth used float-zone crystal wafers zone molten impurity method also vertical process surface tension light impurities gas concentration germanium

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SubjectPredicateObjectConfidenceSrc
ion implantationinstance ofgas doping and neutron transmutation doping are used to incorporate a uniform concentration of desirable impurity.Float-zone silicon wafers can be converted into doped semicondu…0.80text
Float-zone siliconrelated to ApplicationFloat-zone0.60section
Float-zone siliconrelated to ApplicationIt0.60section

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