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Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential…
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ald surface process deposition used layer precursors use metal films also ale reactions deposited thin high using metals atomic substrate
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| chemical vapor deposition | instance of | In contrast to other techniques | 0.80 | text |
| Al2O3 | instance of | and materials that have been explored include inorganic metal oxides | 0.80 | text |
| NH3 or pyridine | instance of | Typical catalysts for SiO2 ALD include Lewis bases | 0.80 | text |
| SiO2 | instance of | Typical catalysts for SiO2 ALD include Lewis bases | 0.80 | text |
| Atomic layer deposition | related to 2000s | In | 0.60 | section |
| Atomic layer deposition | related to 2000s | Gurtej Singh Sandhu | 0.60 | section |
| Atomic layer deposition | related to 2000s | Trung | 0.60 | section |
| Atomic layer deposition | related to 2000s | Doan | 0.60 | section |
| Atomic layer deposition | related to 2000s | Micron Technology | 0.60 | section |
| Atomic layer deposition | related to 2000s | DRAM | 0.60 | section |
| Atomic layer deposition | related to 2000s | This | 0.60 | section |
| Atomic layer deposition | related to 2000s | Intel Corporation | 0.60 | section |
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