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Strain engineering

Strain engineering refers to a general strategy employed in semiconductor manufacturing to enhance device performance. Performance benefits are achieved by modulating strain, as one example, in the transistor channel, which enhances electron mobility (or hole mobility) and thereby conductivity through the channel. Another example is semiconductor…

Technology, In III-N LEDs & In CMOS manufacturing

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Overview

In CMOS manufacturing

In thin films

In III-N LEDs

In nano-scale materials

In 2D materials

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Strain engineering

Nodes56
Edges55
Triples82
Avg. degree1.96
Density0.035714
Components1

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Strain engineering

Top relations

related to In DUV LEDs · 20
Strain engineering → Active, Al, AlGaN, All, AlN, AlN's, By, Deep Ultraviolet, DUV, DUV LEDs, Furthermore, GaN, III-N LEDs, In, IQE, LEDs, Studies, TE, The, TM
related to In III-N LEDs · 20
Strain engineering → As, Due, Furthermore, GaN, However, III-N LEDs, In, InGaN, LED, LEDs, Most III-N LEDs, Nobel Prize, Physics, QCSE, Si, Stark, Strain, The, This, With
related to In nano-scale materials · 14
Strain engineering → Density Functional Theory, DFT, Even, However, In, Keeping, Moore's, Most, Straining, Taking, Theoretically, This, Typically, With
related to In 2D materials · 12
Strain engineering → Additionally, For, However, I-V, In, MoS2, Plastic, Recent, ReSe2, The, These, This
related to In CMOS manufacturing · 12
Strain engineering → AMD, CMOS, CVD, IBM, Intel, Many, NMOS, One, PMOS, Specifically, Standard, The

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Important terminology

strain engineering leds epitaxial elastic materials lattice properties dislocation films silicon film bandgap example thin semiconductor dislocations layer misfit material

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
WSe 2 strain has been shown to induce conversion from an indirect semiconductor to a direct semiconductor allowing a hundred-fold increase in the light emission rateinstance ofin two dimensional materials0.80text
deforming the substrateinstance ofit is easier to apply strain along a specific crystallographic direction in 2D materials compared to bulk materials.Recent research has shown significant progress in strain engi…0.80text
inducing material ripplinginstance ofit is easier to apply strain along a specific crystallographic direction in 2D materials compared to bulk materials.Recent research has shown significant progress in strain engi…0.80text
and creating lattice asymmetryinstance ofit is easier to apply strain along a specific crystallographic direction in 2D materials compared to bulk materials.Recent research has shown significant progress in strain engi…0.80text
Strain engineeringrelated to In 2D materialsIn0.60section
Strain engineeringrelated to In 2D materialsPlastic0.60section
Strain engineeringrelated to In 2D materialsHowever0.60section
Strain engineeringrelated to In 2D materialsAdditionally0.60section
Strain engineeringrelated to In 2D materialsRecent0.60section
Strain engineeringrelated to In 2D materialsThese0.60section
Strain engineeringrelated to In 2D materialsFor0.60section
Strain engineeringrelated to In 2D materialsMoS20.60section

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