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Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer.
Applications, Uses & Types of sputter deposition
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sputtering deposition sputter gas target film used process substrate also sputtered ions reactive source atoms pressure coating thin material chamber
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| Sputter deposition | is a | physical vapor deposition | 0.90 | text |
| argon | instance of | The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure.The sputtering gas is often an inert gas | 0.80 | text |
| zinc oxide | instance of | The coating is a multilayer containing silver and metal oxides | 0.80 | text |
| tin oxide | instance of | The coating is a multilayer containing silver and metal oxides | 0.80 | text |
| or titanium dioxide | instance of | The coating is a multilayer containing silver and metal oxides | 0.80 | text |
| sputtering deposition | instance of | using CMOS-compatible fabrication techniques | 0.80 | text |
| subtractive etch.Sputter coatingSputter coating in scanning electron microscopy is a sputter deposition process | instance of | using CMOS-compatible fabrication techniques | 0.80 | text |
| oxygen | instance of | and are compatible with reactive gases | 0.80 | text |
| epitaxial growth are possible.Some disadvantages of the sputtering process are that the process is more difficult to combine with a lift-off for structuring the film | instance of | Advanced processes | 0.80 | text |
| argon | instance of | The sputter gas is typically an inert gas | 0.80 | text |
| oxygen or nitrogen | instance of | The chemical reaction that the particles undergo is with a reactive gas introduced into the sputtering chamber | 0.80 | text |
| enabling the production of oxide | instance of | The chemical reaction that the particles undergo is with a reactive gas introduced into the sputtering chamber | 0.80 | text |
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