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Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to…

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Gate oxide

Nodes33
Edges32
Triples16
Avg. degree1.94
Density0.060606
Components1

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Gate oxide

Top relations

related to history · 11
Gate oxide → Bell Labs, Bijan Davari, By, Carl Frosch, Derrick, Frosch, IBM Thomas, In, Lincoln Derrick, MOSFET, Watson Research Center
is a · 3
Gate oxide → dielectric layer that separates the gate terminal of a MOSFET, thin electrode layer made of a conductor which can be aluminium, thin n-type inversion layer on the surface of the p-type semiconductor substrate

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Important terminology

gate oxide layer channel silicon conductor metal transistor conductive thin electric electrode may dielectric dioxide semiconductor source drain formed oxidation

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
Gate oxideis adielectric layer that separates the gate terminal of a MOSFET0.90text
Gate oxideis athin electrode layer made of a conductor which can be aluminium0.90text
Gate oxideis athin n-type inversion layer on the surface of the p-type semiconductor substrate0.90text
tungsteninstance ofa refractory metal0.80text
a silicideinstance ofa refractory metal0.80text
Gate oxiderelated to historyIn0.60section
Gate oxiderelated to historyCarl Frosch0.60section
Gate oxiderelated to historyLincoln Derrick0.60section
Gate oxiderelated to historyBell Labs0.60section
Gate oxiderelated to historyBy0.60section
Gate oxiderelated to historyFrosch0.60section
Gate oxiderelated to historyDerrick0.60section

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    Min side: 3
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