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Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe alloys) films. A remote low energy, high density DC argon plasma is employed to efficiently decompose the gas phase precursors while leaving the…
Works, LEPECVD reactor & Working principle
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plasma substrate lepecvd deposition chamber high reactor source silicon growth density energy epitaxial germanium discharge rate used low gas argon
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