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High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used…

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Versions of HEMTs

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High-electron-mobility transistor

Nodes83
Edges82
Triples37
Avg. degree1.98
Density0.024096
Components1

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High-electron-mobility transistor

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related to history · 31
High-electron-mobility transistor → April, Arthur Gossard, August, Bell Labs, D-HEMT, Daniel Delagebeaudeuf, Delagebeaudeuf, E-HEMT, France, Fujitsu, GaAs, He, HEMT, Horst Störmer, Independently, It, Japan, Later, March, May

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electrons hemt hemts layer used band gaas algaas voltage channel different power heterojunction high also gate electron conduction transistor two

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SubjectPredicateObjectConfidenceSrc
cell phonesinstance ofand are used in high-frequency products0.80text
satellite television receiversinstance ofand are used in high-frequency products0.80text
voltage convertersinstance ofand are used in high-frequency products0.80text
and radar equipmentinstance ofand are used in high-frequency products0.80text
radar systemsinstance ofpower supply adapters and DBS receivers to radio astronomy and electronic warfare systems0.80text
power inverters in electric vehiclesinstance ofGallium nitride HEMTs are also being developed for higher-power applications0.80text
High-electron-mobility transistorrelated to historyThe0.60section
High-electron-mobility transistorrelated to historyHEMT0.60section
High-electron-mobility transistorrelated to historyTakashi Mimura0.60section
High-electron-mobility transistorrelated to historyFujitsu0.60section
High-electron-mobility transistorrelated to historyJapan0.60section
High-electron-mobility transistorrelated to historyGaAs0.60section

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