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Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical of a…
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charge trapping flash layer gate memory floating oxide trap cell nand nitride technology channel structure used silicon control spansion process
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| word line breakdown | instance of | The concept of bandgap engineered for tunneling barrier is recognized as a necessary path for charge-trapping devices.Although charge trapping NAND can help the GCR and FG cross… | 0.80 | text |
| too few electrons | instance of | The concept of bandgap engineered for tunneling barrier is recognized as a necessary path for charge-trapping devices.Although charge trapping NAND can help the GCR and FG cross… | 0.80 | text |
| Charge trap flash | related to Charge trap flash experiments | In | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | Japanese NEC | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | Kodama | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | Oyama | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | Hiroki Shirai | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | Israeli | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | Boaz Eitan | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | Saifun Semiconductors | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | Spansion | 0.60 | section |
| Charge trap flash | related to Charge trap flash experiments | NROM | 0.60 | section |
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