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In crystallography, a stacking fault is a planar defect that can occur in crystalline materials. Crystalline materials form repeating patterns of layers of atoms. Errors can occur in the sequence of these layers and are known as stacking faults. Stacking faults are in a higher energy state which is quantified by the formation enthalpy per unit area…
Measurement, Stacking faults in semiconductors & Formation of stacking faults in FCC crystal
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stacking fault faults crystal dislocations partial atoms fcc dislocation energy sequence hcp layers first two materials structure vector occur one
| Subject | Predicate | Object | Confidence | Src |
|---|---|---|---|---|
| Stacking fault | is a | planar defect that can occur in crystalline materials | 0.90 | text |
| Stacking fault | is a | local deviation from one of the close-packed stacking sequences to the other one | 0.90 | text |
| a partial edge dislocation | instance of | The start and finish of a stacking fault are marked by partial line dislocations | 0.80 | text |
| shear modulus | instance of | The force of repulsion depends on factors | 0.80 | text |
| burger's vector | instance of | The force of repulsion depends on factors | 0.80 | text |
| Poisson's ratio | instance of | The force of repulsion depends on factors | 0.80 | text |
| and distance between the dislocations.As the partial dislocations repel | instance of | The force of repulsion depends on factors | 0.80 | text |
| stacking fault is created in between | instance of | The force of repulsion depends on factors | 0.80 | text |
| Stacking fault | related to Formation of stacking faults in FCC crystal | Stacking | 0.60 | section |
| Stacking fault | related to Formation of stacking faults in FCC crystal | They | 0.60 | section |
| Stacking fault | related to Formation of stacking faults in FCC crystal | The | 0.60 | section |
| Stacking fault | related to Formation of stacking faults in FCC crystal | Line | 0.60 | section |
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