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Resistive random-access memory

Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

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RambusPanasonicTantalum oxideCrossbarWafer
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Demonstrations

MRAMITRIIMECAdesto TechnologiesTowerJazz
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Proposed role in artificial intelligence applications

Artificial intelligenceMachine learning
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Future applications

Complementary resistive switching
1 related topics

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Resistive random-access memory

Nodes54
Edges53
Triples13
Avg. degree1.96
Density0.037037
Components1

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Important terminology

reram memory switching dielectric nm resistive material perovskites high one oxide memristor based devices device current may using resistance rram

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
NiOinstance ofphase-change chalcogenides such as Ge 2Sb 2Te 5 or AgInSbTebinary transition metal oxides0.80text
Ta2O5instance ofphase-change chalcogenides such as Ge 2Sb 2Te 5 or AgInSbTebinary transition metal oxides0.80text
or TiO 2perovskites such as Srinstance ofphase-change chalcogenides such as Ge 2Sb 2Te 5 or AgInSbTebinary transition metal oxides0.80text
photovoltaicsinstance ofABX3-type lead trihalide perovskites have received extensive research interest for using in optoelectronic devices0.80text
photodetectorsinstance ofABX3-type lead trihalide perovskites have received extensive research interest for using in optoelectronic devices0.80text
and light-emitting diodesinstance ofABX3-type lead trihalide perovskites have received extensive research interest for using in optoelectronic devices0.80text
Cesiuminstance ofthe organic cations must be substituted by other ions0.80text
vacanciesinstance ofpoint defects0.80text
interstitialsinstance ofpoint defects0.80text
and antisites are possible in the crystalsinstance ofpoint defects0.80text
Pt or Ir to interface with the TaOx layerinstance ofA key requirement was the need for a high work function metal0.80text
MRAMinstance ofand this has been shown possible for a low-current ReRAM system.Modeling of 2D and 3D caches designed with ReRAM and other non-volatile random-access memories0.80text

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