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Intel TeraHertz

Intel TeraHertz was Intel's new design for transistors. It uses new materials such as zirconium dioxide which is a superior insulator reducing current leakages. Using zirconium dioxide instead of silicon dioxide, this transistor can reduce the current leakage, and thus reduces power consumption while still working at higher speed and using lower voltages.

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Intel TeraHertz

Nodes6
Edges5
Triples8
Avg. degree1.67
Density0.333333
Components1

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Intel TeraHertz

Top relations

related to External links · 7
Intel TeraHertz → Archived, Chip Transistor Design Archived, Intel, Intel Announces Breakthrough In, May, Nov, Wayback Machine

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Important terminology

transistor silicon new current depleted layer intel dioxide leakage substrate terahertz design transistors intel's zirconium power element ultra-thin top turned

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
zirconium dioxide which is a superior insulator reducing current leakagesinstance ofIt uses new materials0.80text
Intel TeraHertzrelated to External linksIntel0.60section
Intel TeraHertzrelated to External linksNov0.60section
Intel TeraHertzrelated to External linksIntel Announces Breakthrough In0.60section
Intel TeraHertzrelated to External linksChip Transistor Design Archived0.60section
Intel TeraHertzrelated to External linksWayback Machine0.60section
Intel TeraHertzrelated to External linksMay0.60section
Intel TeraHertzrelated to External linksArchived0.60section

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