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GeSbTe

GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to 106 cycles. It is suitable for…

Applications, Applications in phase-change memory & Material properties

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Overview

Material properties

Applications in phase-change memory

Threshold switching

Nano-timescale phase change

Nucleation-domination versus growth-domination

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Map overview Semantic statistics

GeSbTe

Nodes70
Edges69
Triples53
Avg. degree1.97
Density0.028571
Components1

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GeSbTe

Top relations

related to Material properties · 14
GeSbTe → Crystal, FCC, GeTe, GeTe-Sb2Te3, Hence, In, Moving, On, Sb2Te3, Te, The, This, Urbach, When
has application · 9
GeSbTe → In, RESET, SET, SRAM, The, Therefore, These, This, When
related to Nano-timescale phase change · 9
GeSbTe → By, Car-Parrinello, Ge, Recently, Sb, Te, The, Using, Using EXAFS
related to Threshold switching · 9
GeSbTe → Current, In, IV, ON, The, There, This, Threshold, V/um
related to Nucleation-domination versus growth-domination · 6
GeSbTe → AgInSbTe, Another, CDs, In AgInSbTe, In GeSbTe, It
is a · 1
GeSbTe → distorted rocksalt lattice and for amorphous a tetrahedral structure

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Important terminology

memory phase-change material crystalline amorphous high current state phase crystallization density time used low also threshold switching change melting point

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
GeSbTeis adistorted rocksalt lattice and for amorphous a tetrahedral structure0.90text
Sb2Te3instance ofwe need to use material with fast crystallization speed0.80text
non-volatilityinstance ofThe advances in lithography also meant that previously excessive programming current has now become much smaller as the volume of GeSbTe that changes phase is reduced.Phase-chan…0.80text
fast switching speedinstance ofThe advances in lithography also meant that previously excessive programming current has now become much smaller as the volume of GeSbTe that changes phase is reduced.Phase-chan…0.80text
high endurance of more than 1013 readinstance ofThe advances in lithography also meant that previously excessive programming current has now become much smaller as the volume of GeSbTe that changes phase is reduced.Phase-chan…0.80text
impact ionization or tunnelinginstance ofThere were suggestions that the exponential increase in current at threshold voltage must have been due to generation of carriers that vary exponentially with voltage0.80text
GeSbTehas applicationThe0.60section
GeSbTehas applicationThese0.60section
GeSbTehas applicationIn0.60section
GeSbTehas applicationThis0.60section
GeSbTehas applicationWhen0.60section
GeSbTehas applicationRESET0.60section

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