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Atomic layer epitaxy

Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate. The reactants are brought to the…

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Atomic layer epitaxy

Nodes16
Edges15
Triples8
Avg. degree1.88
Density0.125
Components1

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Atomic layer epitaxy

Top relations

related to External links · 8
Atomic layer epitaxy → ALENET, Atomic Layer Epitaxy NetworkSurface, Eindhoven University, GaAs, Materials Processing, Plasma, Plasma-assisted Atomic Layer Deposition, TechnologyAtomic

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Important terminology

thin substrate ald ale deposition film thickness used epitaxy atomic layer alternating dead times material technique reaction technology surface growth

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
Atomic layer epitaxyrelated to External linksPlasma-assisted Atomic Layer Deposition0.60section
Atomic layer epitaxyrelated to External linksPlasma0.60section
Atomic layer epitaxyrelated to External linksMaterials Processing0.60section
Atomic layer epitaxyrelated to External linksEindhoven University0.60section
Atomic layer epitaxyrelated to External linksTechnologyAtomic0.60section
Atomic layer epitaxyrelated to External linksALENET0.60section
Atomic layer epitaxyrelated to External linksAtomic Layer Epitaxy NetworkSurface0.60section
Atomic layer epitaxyrelated to External linksGaAs0.60section

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