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IGBT

Bipolární tranzistor s izolovaným hradlem (Anglicky insulated-gate bipolar transistor IGBT) je druh tranzistorů, který je zkonstruován pro velký rozsah spínaných výkonů (od zlomků W až po desítky MW) a vysokou pulzní frekvenci. IGBT je integrovaná kombinace unipolární a bipolární součástky. Čip tranzistoru má hradlo izolované tenkou oxidovou vrstvou…

Použití, Vývoj & Výhody

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IGBT

Nodes23
Edges22
Triples7
Avg. degree1.91
Density0.086957
Components1

How this topic connects Entity context

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IGBT

Top relations

related to Vývoj · 5
IGBT → Do, MW, NMOS, Postupem, Proto
related to Externí odkazy · 2
IGBT → Obrázky, Wikimedia Commons

Important terminology Word statistics

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Important terminology

bipolární napětí mosfet tranzistory rozsah mw výkon stavu tranzistorů např tranzistor izolovaným hradlem anglicky insulated-gate bipolar transistor druh zkonstruován velký

Entity relationships Subject–Predicate–Object triples

SubjectPredicateObjectConfidenceSrc
IGBTrelated to Externí odkazyObrázky0.60section
IGBTrelated to Externí odkazyWikimedia Commons0.60section
IGBTrelated to VývojDo0.60section
IGBTrelated to VývojMW0.60section
IGBTrelated to VývojNMOS0.60section
IGBTrelated to VývojProto0.60section
IGBTrelated to VývojPostupem0.60section

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    Min side: 3
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